The Analysis of SEU in Nanowire FETs and Nanosheet FETs
نویسندگان
چکیده
The effects of the single-event upset (SEU) generated by radiation on nanowire field-effect transistors (NW-FETs) and nanosheet (NS)-FETs were analyzed according to incident angle location radiation, using three-dimensional technology computer-aided design tools. greatest SEU occurred when particle was at 90°, whereas least 15°. significantly affected drain, as compared it source. NS-FETs robust SEU, unlike NW-FETs. This phenomenon can be attributed difference in area exposed even if channel widths these devices identical.
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ژورنال
عنوان ژورنال: Electronics
سال: 2021
ISSN: ['2079-9292']
DOI: https://doi.org/10.3390/electronics10070863